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Metallic-CN-Removal-Tolerant High-Yield Six-CN-MOSFET SRAM Cell for Carbon-Based Embedded Memory

Date of Publication:2018-03-01 Hits:

Journal:IEEE TRANSACTIONS ON ELECTRON DEVICES
ISSN No.:0018-9383
Translation or Not:no
Date of Publication:2018-03-01
Indexed by:期刊论文

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