上海交大研究生院主页平台管理系统 zhanglanting--Home--Paper Publications

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Microstructural effect on oxidation kinetics of NbSi2 at 1023K.Journal of Alloys and Compounds Vol. 422 (2006) P.308.2006
2020-06-09
First-principle study of electronic and geometrical structures of semiconducting b-FeSi2 with dop....Materials Science and Engineering B (2006).2006
2020-06-09
NbSi2在1023K氧化动力学和氧化行为的高温原位观察.中国科学E辑Vol. 36 (2006) P. 235.2006
2020-06-09
添加Ag、Sb对PbTe化合物组织与结构的影响.中国有色金属学报 Vol.16(2006) p.1756.2006
2020-06-09
Oxidation of stoichiometric poly and single crystalline MoSi2 at 773K.Intermetallics Vol. 14 (2006) P. 406.2006
2020-06-09
Growth of single crystals and low temperature oxidation behaviors MoSi2 and NbSi2.Materials Science Forum Vol. 475-479 (2005) P.729.2005
2020-06-09
Effect of Al doping on the thermoelectric performance of CoSi single crystal.Journal of Applied Physics Vol. 98 (2005) P.063706.2005
2020-06-09
La0.75Fe3CoSb12晶体结构的X射线和电子衍射表征.物理学报 Vol. 54 (2005) P.3302.2005
2020-06-09
单晶和多晶NbSi2在1023K氧化行为的对比.金属学报 Vol. 41 (2005) P. 645.2005
2020-06-09
CoSi电子结构第一性原理计算.物理学报 Vol. 54 (2005) P.328.2005
2020-06-09

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