上海交大研究生院主页平台管理系统 zhouliang--Home-- Electro-Thermal-Stress Interaction of GaN HEMT Breakdown Induced by High Power Microwave Pulses

Home > Scientific Research > Paper Publications

Electro-Thermal-Stress Interaction of GaN HEMT Breakdown Induced by High Power Microwave Pulses

Date of Publication:2016-01-01 Hits:

Journal:2016 Asia-Pacific International Symposium on Electromagnetic Compatibility (APEMC)
Translation or Not:no
Date of Publication:2016-01-01
Indexed by:会议论文

Pre One:Investigating Thermal Breakdown and Immunity Analysis on a Silicon-based Low Noise Amplifier under HPM pulses

Next One:An Improved Model of LDMOS Power Amplifier for Effectively Suppressing Metallic Shielding Cover Effects

Recommend this article

Home

Scientific Research

Teaching Research

Awards and Honours

Admission Information

Student Information

My Album

Blog

Personal Information

Electro-Thermal-Stress Interaction of GaN HEMT Breakdown Induced by High Power Microwave Pulses