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A 0.33 V 2.5 mu W cross-point data-aware write structure, read-half-select disturb-free sub-threshold SRAM in 130 nm CMOS

Date of Publication:2017-06-01 Hits:

Journal:INTEGRATION, THE VLSI JOURNAL
ISSN No.:0167-9260
Translation or Not:no
Date of Publication:2017-06-01
Indexed by:期刊论文

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