上海交大研究生院主页平台管理系统 renpengpeng--Home-- Defect-Based Empirical Model for On-State Degradation in Sub-20-nm DRAM Periphery pFETs Under Arbitrary Condition

Language : 中文

任鹏鹏

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Journal:Ieee Transactions on Electron Devices

ISSN No.:0018-9383

Translation or Not:no

Date of Publication:2022-12-01

Indexed by:期刊论文

Date of Publication:2022-12-01

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