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[1] Defect-Based Empirical Model for On-State Degradation in Sub-20-nm DRAM Periphery pFETs Under Arbitrary Condition Ieee Transactions on Electron Devices, 2022,
[2] Towards the Characterization of Full ID-VGDegradation in Transistors for Future Analog Applications IEEE International Reliability Physics Symposium Proceedings, 2022,
[3]renpengpeng. Realization of NOR logic using Cu/ZnO/Pt CBRAM 6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022, 2022,
[4]renpengpeng. Realization of Logical NOT Based on Standard DRAM Cells for security-centric Compute-in-Memory applications 6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022, 2022,
[5] New Insight into the Aging Induced Retention Time Degraded of Advanced DRAM Technology IEEE International Reliability Physics Symposium Proceedings, 2022,
[6] Characterization and Modelling of Hot Carrier Degradation in pFETs under Vd>Vg Condition for sub-20nm DRAM Technologies IEEE International Reliability Physics Symposium Proceedings, 2022,
[7]renpengpeng. Investigation on the implementation of stateful minority logic for future in-memory computing IEEE Access, 2021,
[8]renpengpeng. A Probability-based Strong Physical Unclonable Function with Strong Machine Learning Immunity IEEE Electron Device Letters, 2022,
[9]renpengpeng. Pitfalls for the characterization of self-heating effect in nano-scaled devices International Symposium on the Physical and Failure Analysis of Integrated Circuits(IPFA), 2021, 2021,
[10]renpengpeng. Investigation of Time Dependent Dielectric Breakdown (TDDB) of Hf0.5Zr0.5O2-Based Ferroelectrics Under Both Forward and Reverse Stress Conditions IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2021,
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