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Scientific Research
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Defect-Based Empirical Model for On-State Degradation in Sub-20-nm DRAM Periphery pFETs Under Arbitrary Condition.Ieee Transactions on Electron Devices.2022
Towards the Characterization of Full ID-VGDegradation in Transistors for Future Analog Applications.IEEE International Reliability Physics Symposium Proceedings.2022
Realization of NOR logic using Cu/ZnO/Pt CBRAM.6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022.2022
Realization of Logical NOT Based on Standard DRAM Cells for security-centric Compute-in-Memory applications.6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022.2022
New Insight into the Aging Induced Retention Time Degraded of Advanced DRAM Technology.IEEE International Reliability Physics Symposium Proceedings.2022
Characterization and Modelling of Hot Carrier Degradation in pFETs under Vd>Vg Condition for sub-20nm DRAM Technologies.IEEE International Reliability Physics Symposium Proceedings.2022
Investigation on the implementation of stateful minority logic for future in-memory computing.IEEE Access.2021
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关键标准单元和相关电路设计工作
研发合作协议
面向数字流程的跨层次可靠性设计方法
电路设计EDA工具评估
先进工艺节点新型互连线结构温度耦合及电迁移的建模技术合作
电路级可靠性机制研究项目
多量程超快测量模块试制服务
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