上海交大研究生院主页平台管理系统任鹏鹏--中文主页-- Characterization and Modelling of Hot Carrier Degradation in pFETs under Vd>Vg Condition for sub-20nm DRAM Technologies

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Characterization and Modelling of Hot Carrier Degradation in pFETs under Vd>Vg Condition for sub-20nm DRAM Technologies

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发表刊物：IEEE International Reliability Physics Symposium Proceedings

是否译文：否

发表时间：2022-03-01

论文类型：会议论文

通讯作者：任鹏鹏

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