上海交大研究生院主页平台管理系统任鹏鹏--中文主页--论文成果

论文成果

中文主页 - 科学研究 - 论文成果

[1] 期刊论文，Defect-Based Empirical Model for On-State Degradation in Sub-20-nm DRAM Periphery pFETs Under Arbâ¦,Ieee Transactions on Electron Devices,2022/12/01
[2] 会议论文，Towards the Characterization of Full ID-VGDegradation in Transistors for Future Analog Applicatioâ¦,IEEE International Reliability Physics Symposium Proceedings,2022/03/01,任鹏鹏
[3] 会议论文，Realization of NOR logic using Cu/ZnO/Pt CBRAM,6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022,2022/06/01
[4] 会议论文，Realization of Logical NOT Based on Standard DRAM Cells for security-centric Compute-in-Memory apâ¦,6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022,2022/06/01
[5] 会议论文，New Insight into the Aging Induced Retention Time Degraded of Advanced DRAM Technology,IEEE International Reliability Physics Symposium Proceedings,2022/05/01,任鹏鹏
[6] 会议论文，Characterization and Modelling of Hot Carrier Degradation in pFETs under Vd>Vg Condition for sub-â¦,IEEE International Reliability Physics Symposium Proceedings,2022/03/01
[7] 期刊论文，Investigation on the implementation of stateful minority logic for future in-memory computing,IEEE Access,2021/12/01
[8] 期刊论文，A Probability-based Strong Physical Unclonable Function with Strong Machine Learning Immunity,IEEE Electron Device Letters,2022/01/01
[9] 会议论文，Pitfalls for the characterization of self-heating effect in nano-scaled devices,International Symposium on the Physical and Failure Analysis of Integrated Circuits(IPFA), 2021,2021/09/01
[10] 期刊论文，Investigation of Time Dependent Dielectric Breakdown (TDDB) of Hf0.5Zr0.5O2-Based Ferroelectrics â¦,IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY,2021/08/01

共10条 1/1

首页上页下页尾页

首页

科学研究

教学研究

获奖信息

学生信息

招生信息

个人主页

我的相册

教师博客

更多

论文成果

[1] 期刊论文，Defect-Based Empirical Model for On-State Degradation in Sub-20-nm DRAM Periphery pFETs Under Arbâ¦,Ieee Transactions on Electron Devices,2022/12/01

[2] 会议论文，Towards the Characterization of Full ID-VGDegradation in Transistors for Future Analog Applicatioâ¦,IEEE International Reliability Physics Symposium Proceedings,2022/03/01,任鹏鹏

[3] 会议论文，Realization of NOR logic using Cu/ZnO/Pt CBRAM,6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022,2022/06/01

[4] 会议论文，Realization of Logical NOT Based on Standard DRAM Cells for security-centric Compute-in-Memory apâ¦,6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022,2022/06/01

[5] 会议论文，New Insight into the Aging Induced Retention Time Degraded of Advanced DRAM Technology,IEEE International Reliability Physics Symposium Proceedings,2022/05/01,任鹏鹏

[6] 会议论文，Characterization and Modelling of Hot Carrier Degradation in pFETs under Vd>Vg Condition for sub-â¦,IEEE International Reliability Physics Symposium Proceedings,2022/03/01

[7] 期刊论文，Investigation on the implementation of stateful minority logic for future in-memory computing,IEEE Access,2021/12/01

[8] 期刊论文，A Probability-based Strong Physical Unclonable Function with Strong Machine Learning Immunity,IEEE Electron Device Letters,2022/01/01

[9] 会议论文，Pitfalls for the characterization of self-heating effect in nano-scaled devices,International Symposium on the Physical and Failure Analysis of Integrated Circuits(IPFA), 2021,2021/09/01

[10] 期刊论文，Investigation of Time Dependent Dielectric Breakdown (TDDB) of Hf0.5Zr0.5O2-Based Ferroelectrics â¦,IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY,2021/08/01

论文成果

[1] 期刊论文，Defect-Based Empirical Model for On-State Degradation in Sub-20-nm DRAM Periphery pFETs Under Arbâ¦,Ieee Transactions on Electron Devices,2022/12/01

[2] 会议论文，Towards the Characterization of Full ID-VGDegradation in Transistors for Future Analog Applicatioâ¦,IEEE International Reliability Physics Symposium Proceedings,2022/03/01,任鹏鹏

[3] 会议论文，Realization of NOR logic using Cu/ZnO/Pt CBRAM,6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022,2022/06/01

[4] 会议论文，Realization of Logical NOT Based on Standard DRAM Cells for security-centric Compute-in-Memory apâ¦,6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022,2022/06/01

[5] 会议论文，New Insight into the Aging Induced Retention Time Degraded of Advanced DRAM Technology,IEEE International Reliability Physics Symposium Proceedings,2022/05/01,任鹏鹏

[6] 会议论文，Characterization and Modelling of Hot Carrier Degradation in pFETs under Vd&gt;Vg Condition for sub-â¦,IEEE International Reliability Physics Symposium Proceedings,2022/03/01

[7] 期刊论文，Investigation on the implementation of stateful minority logic for future in-memory computing,IEEE Access,2021/12/01

[8] 期刊论文，A Probability-based Strong Physical Unclonable Function with Strong Machine Learning Immunity,IEEE Electron Device Letters,2022/01/01

[9] 会议论文，Pitfalls for the characterization of self-heating effect in nano-scaled devices,International Symposium on the Physical and Failure Analysis of Integrated Circuits(IPFA), 2021,2021/09/01

[10] 期刊论文，Investigation of Time Dependent Dielectric Breakdown (TDDB) of Hf0.5Zr0.5O2-Based Ferroelectrics â¦,IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY,2021/08/01

[1] 期刊论文，Defect-Based Empirical Model for On-State Degradation in Sub-20-nm DRAM Periphery pFETs Under Arbâ¦,Ieee Transactions on Electron Devices,2022/12/01

[2] 会议论文，Towards the Characterization of Full ID-VGDegradation in Transistors for Future Analog Applicatioâ¦,IEEE International Reliability Physics Symposium Proceedings,2022/03/01,任鹏鹏

[4] 会议论文，Realization of Logical NOT Based on Standard DRAM Cells for security-centric Compute-in-Memory apâ¦,6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022,2022/06/01

[6] 会议论文，Characterization and Modelling of Hot Carrier Degradation in pFETs under Vd>Vg Condition for sub-â¦,IEEE International Reliability Physics Symposium Proceedings,2022/03/01

[10] 期刊论文，Investigation of Time Dependent Dielectric Breakdown (TDDB) of Hf0.5Zr0.5O2-Based Ferroelectrics â¦,IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY,2021/08/01