论文成果
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Defect-Based Empirical Model for On-State Degradation in Sub-20-nm DRAM Periphery pFETs Under Arbitrary Condition.Ieee Transactions on Electron Devices.2022
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Towards the Characterization of Full ID-VGDegradation in Transistors for Future Analog Applications.IEEE International Reliability Physics Symposium Proceedings.2022
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Realization of NOR logic using Cu/ZnO/Pt CBRAM.6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022.2022
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Realization of Logical NOT Based on Standard DRAM Cells for security-centric Compute-in-Memory applications.6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022.2022
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New Insight into the Aging Induced Retention Time Degraded of Advanced DRAM Technology.IEEE International Reliability Physics Symposium Proceedings.2022
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Characterization and Modelling of Hot Carrier Degradation in pFETs under Vd>Vg Condition for sub-20nm DRAM Technologies.IEEE International Reliability Physics Symposium Proceedings.2022
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Investigation on the implementation of stateful minority logic for future in-memory computing.IEEE Access.2021
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A Probability-based Strong Physical Unclonable Function with Strong Machine Learning Immunity.IEEE Electron Device Letters.2022