上海交大研究生院主页平台管理系统 renpengpeng--Home-- Characterization and Modelling of Hot Carrier Degradation in pFETs under Vd>Vg Condition for sub-20nm DRAM Technologies

Language : 中文

任鹏鹏

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Journal:IEEE International Reliability Physics Symposium Proceedings

Translation or Not:no

Date of Publication:2022-03-01

Indexed by:会议论文

Date of Publication:2022-03-01

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