上海交大研究生院主页平台管理系统 renpengpeng--Home-- Realization of Logical NOT Based on Standard DRAM Cells for security-centric Compute-in-Memory applications

Language : 中文

任鹏鹏

Scientific Research: Research Field; Paper Publications; Patents; Published Books; Research Projects

Teaching Research: Teaching Resources; Teaching Information; Teaching Achievement

Current position: Home > Scientific Research > Paper Publications

Hits:

Journal:6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022

ISSN No.:978-1-6654-2178-2

Translation or Not:no

Date of Publication:2022-06-01

Indexed by:会议论文

Date of Publication:2022-06-01

Pre One:Defect-Based Empirical Model for On-State Degradation in Sub-20-nm DRAM Periphery pFETs Under Arbitrary Condition

Next One:Realization of Logical NOT Based on Standard DRAM Cells for security-centric Compute-in-Memory applications

Recommend this Article

Click: